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| PHT4NQ10T TrenchMOSTM standard level FET M3D087 Rev. 02 -- 2 May 2002 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: PHT4NQ10T in SOT223. 2. Features s TrenchMOSTM technology s Very fast switching s Surface mount package. 3. Applications s Primary side switch in DC to DC converters s High speed line driver s Fast general purpose switch. 4. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description gate (g) 4 Simplified outline Symbol d drain (d) source (g) drain (d) 1 Top view g s 2 3 MSB002 - 1 MBB076 SOT223 Philips Semiconductors PHT4NQ10T TrenchMOSTM standard level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 C Tj 150 C Tsp = 25 C; VGS = 10 V Tsp = 25 C VGS = 10 V; ID = 1.75 A Tj = 25 C Tj = 150 C 200 250 575 m m Typ Max 100 3.5 6.9 150 Unit V A W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tsp = 25 C; VGS = 10 V; Figure 2 and 3 Tsp = 100 C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IS ISM EDS(AL)S IDS(AL)SM peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) peak source (diode forward) current Tsp = 25 C Tsp = 25 C; pulsed; tp 10 s Tsp = 25 C; pulsed; tp 10 s; Figure 3 Tsp = 25 C; Figure 1 Conditions 25 C Tj 150 C 25 C Tj 150 C; RGS = 20 k Min -65 -65 Max 100 100 20 3.5 2.2 14 6.9 +150 +150 3.5 14 45 3.5 Unit V V V A A A W C C A A mJ A Source-drain diode Avalanche ruggedness non-repetitive drain-source avalanche unclamped inductive load; ID = 3.5 A; energy tp = 0.2 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C; peak non-repetitive drain-source Figure 4 avalanche current 9397 750 09581 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 2 May 2002 2 of 12 Philips Semiconductors PHT4NQ10T TrenchMOSTM standard level FET 03aa17 120 Pder (%) 120 I der (%) 80 03aa25 80 40 40 0 0 50 100 150 Tsp (C) 200 0 0 50 100 150 200 Tsp (C) P tot P der = ---------------------- x 100% P tot ( 25 C ) VGS 10 V ID I der = ------------------ x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 102 ID (A) 10 Limit RDSon = VDS/ID 03aa88 10 IAS 03aa97 tp = 10 s 100 s (A) 25 C 1 1 1 ms DC 10-1 10 ms 100 ms Tj prior to avalanche = 125 C 10-2 1 10 102 103 VDS (V) 10-1 10-2 10-1 1 tp (ms) 10 Tsp = 25 C; IDM is single pulse. Unclamped inductive load; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C and 125 C. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration. 9397 750 09581 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 2 May 2002 3 of 12 Philips Semiconductors PHT4NQ10T TrenchMOSTM standard level FET 7. Thermal characteristics Table 4: Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Min Typ 150 Max 18 Unit K/W K/W mounted on a metal clad substrate; Figure 5 thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint 7.1 Transient thermal impedance 102 Zth(j-sp) (K/W) 10 = 0.5 0.2 0.1 1 0.05 0.02 P tp T 03aa87 = 10-1 single pulse tp T t 10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Mounted on a metal clad substrate. Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 09581 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 2 May 2002 4 of 12 Philips Semiconductors PHT4NQ10T TrenchMOSTM standard level FET 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS Tj = 25 C; Figure 10 Tj = 150 C; Figure 10 Tj = -55 C; Figure 10 IDSS drain-source leakage current VDS = 100 V; VGS = 0 V Tj = 25 C Tj = 150 C VDS = 60 V; VGS = 0 V Tj = 85 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 1.75 A Tj = 25 C; Figure 8 and 9 Tj = 150 C; Figure 9 Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage reverse recovery time recovered charge IS = 3.5 A; VGS = 0 V; Figure 14 IS = 3.5 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 30 V VDD = 50 V; RD = 15 ; VGS = 10 V; RG = 6 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 13 VDS = 5 V; ID = 3.5 A; Figure 12 ID = 3.5 A; VDS = 80 V; VGS = 10 V; Figure 15 4.2 7.4 1.5 3.3 300 44 21 8 13 20 11 0.87 50 100 1.5 S nC nC nC pF pF pF ns ns ns ns V ns nC 200 250 575 m m 10 1 100 A nA 1 4 25 250 A A 2 1.2 3 4 6 V V V 100 89 130 V V Min Typ Max Unit Static characteristics Source-drain diode 9397 750 09581 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 2 May 2002 5 of 12 Philips Semiconductors PHT4NQ10T TrenchMOSTM standard level FET 10 ID (A) 8 Tj = 25 C 03aa90 10 ID VDS > ID X RDSon 8 (A) 03aa92 VGS = 10 V 6V 6 5.5 V 6 Tj = 25 C 4 5V 2 4.8 V 4.6 V 4.2 V 0 0 0.4 0.8 1.2 1.6 2 VDS (V) 4 150 C 2 0 0 2 4 6 VGS (V) 8 Tj = 25 C Tj = 25 C and 150 C; VDS > ID x RDSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 1 RDSon 4.4 V 4.8 V () 0.8 5V 03aa91 3 a 2.5 03aa29 2 0.6 1.5 0.4 5.5 V 6V VGS = 10 V 0.2 Tj = 25 C 0 0 2 4 6 8 ID (A) 10 1 0.5 0 -60 0 60 120 Tj ( C) o 180 Tj = 25 C R DSon a = --------------------------R DSon ( 25 C ) Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 750 09581 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 2 May 2002 6 of 12 Philips Semiconductors PHT4NQ10T TrenchMOSTM standard level FET 03aa32 5 VGS(th) (V) 4 10-1 ID (A) 03aa35 max 10-2 3 typ 10-3 min typ max 2 min 10-4 1 10-5 0 -60 0 60 120 Tj ( C) o 10-6 180 0 2 4 VGS (V) 6 ID = 1 mA; VDS = VGS Tj = 25 C; VDS = 5 V Fig 10. Gate-source threshold voltage as a function of junction temperature. Fig 11. Sub-threshold drain current as a function of gate-source voltage. 03aa93 5 gfs (S) 4 150 C 3 VDS > ID X RDSon Tj = 25 C 103 C (pF) 03aa95 Ciss 102 2 Coss Crss 1 0 0 2 4 6 8 ID (A) 10 10 10-1 1 10 VDS (V) 102 Tj = 25 C and 150 C; VDS > ID x RDSon VGS = 0 V; f = 1 MHz Fig 12. Forward transconductance as a function of drain current; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 09581 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 2 May 2002 7 of 12 Philips Semiconductors PHT4NQ10T TrenchMOSTM standard level FET 10 IS (A) 8 03aa94 15 VGS (V) ID = 3.5 A Tj = 25 C VDS = 20 V 03aa96 10 6 Tj = 150 C VDS = 80 V 4 25 C 2 5 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 4 8 VSD (V) QG (nC) 12 Tj = 25 C and 150 C; VGS = 0 V ID = 3.5 A; VDS = 80 V Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 15. Gate-source voltage as a function of gate charge; typical values. 9397 750 09581 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 2 May 2002 8 of 12 Philips Semiconductors PHT4NQ10T TrenchMOSTM standard level FET 9. Package outline Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ SC-73 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Fig 16. SOT223. 9397 750 09581 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 2 May 2002 9 of 12 Philips Semiconductors PHT4NQ10T TrenchMOSTM standard level FET 10. Revision history Table 6: 02 Revision history CPCN Description Product data (9397 750 09581) Modifications: Rev Date 20020502 * 01 20000731 - Additional IDSS data added. Product specification; initial version. 9397 750 09581 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 2 May 2002 10 of 12 Philips Semiconductors PHT4NQ10T TrenchMOSTM standard level FET 11. Data sheet status Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Product data Production [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Trademarks TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 09581 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 2 May 2002 11 of 12 Philips Semiconductors PHT4NQ10T TrenchMOSTM standard level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 (c) Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 May 2002 Document order number: 9397 750 09581 |
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